| PART |
Description |
Maker |
| BAS16LT1 ON0114 |
CASE 31808, STYLE 8 SOT23 (TO236AB) SILICON, SIGNAL DIODE, TO-236AB
CASE 31808/ STYLE 8 SOT23 (TO236AB)
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BAS70LT1 ON0123 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
From old datasheet system
70VOLTS SCHOTTKY BARRIER DIODES
CASE 318 08 STYLE 8 SOT 23 (TO 236AB)
|
Motorola, Inc
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| BAV70LT1 |
CASE 318-08/ STYLE 9 SOT-23 (TO-236AB)
|
Motorola Inc
|
| BC817-25LT1 BC817-40LT1 BC81716LT1 BC817-16LT1 |
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
|
MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| BAS4004LT1 |
CASE 318 08/ STYLE 12 SOT 23 (TO 236AB)
CASE 318 08, STYLE 12 SOT 23 (TO 236AB)
|
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
|
MOTOROLA[Motorola, Inc]
|
| 2MBI100NE-120 |
CAPACITOR, CASE A, 22UF, 2.5V; Application:Solid; Capacitance:22uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:2.5V; Capacitor dielectric type:Niobium Oxide; Case style:A; Depth, external:1.6mm; Length / Height, RoHS Compliant: Yes
IGBT MODULE ( N series )
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| BAV70WT1 ON0133 |
From old datasheet system
CASE 419-02, STYLE 5 SC-70/SOT-323
|
MOTOROLA[Motorola, Inc]
|
| BS107A BS107 ON0216 |
CASE 29-4, STYLE 30 TO-2 (TO-26AA)
TMOS Switching(N-Channel-Enhancement)
From old datasheet system
|
Motorola, Inc.
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
|
| BC636 BC640 BC638 ON0157 |
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
High Current Transistors(PNP Silicon)
From old datasheet system
|
ON Semiconductor
|
| MPS4250_D ON2323 MPS4250 |
TRANSISTOR(PNP SILICON)
From old datasheet system
CASE 294, STYLE 1 TO2 (TO?26AA)
|
ON Semiconductor
|
